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1
Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs 미리보기

학술저널

issue
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 71(4):427-436 Apr, 2024
Author
Bonaldo, S.
Wallace, T.
Barnaby, H.
Borghello, G.
Termo, G.
Faccio, F.
Fleetwood, D.M.
Mattiazzo, S.
Bagatin, M.
Paccagnella, A.
Gerardin, S.
DB Label
Database : IEEE Xplore Digital Library
원문보기
Full Text (IEEE)  등재 - SCOPUS  조회 - Impact Factor (JCR)  등재 - Web of Science (SCIE) 
2
Ultra-High Total Ionizing Dose Effects in a Highly Integrated and RF-Agile Transceiver 미리보기

회의자료

issue
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Radiation Effects Data Workshop (in conjunction with 2020 NSREC), 2020 IEEE. :1-4 Nov, 2020
Author
Budroweit, J.
Jaksch, M.
Borghello, G.
DB Label
Database : IEEE Xplore Digital Library
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Full Text (IEEE) 
3
Effects of Bias and Temperature on the Dose-Rate Sensitivity of 65-nm CMOS Transistors 미리보기

학술저널

issue
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 68(5):573-580 May, 2021
Author
Borghello, G.
Faccio, F.
Termo, G.
Michelis, S.
Costanzo, S.
Koch, H.D.
Fleetwood, D.M.
DB Label
Database : IEEE Xplore Digital Library
원문보기
Full Text (IEEE)  등재 - SCOPUS  조회 - Impact Factor (JCR)  등재 - Web of Science (SCIE) 
4
Modeling of High Total Ionizing Dose (TID) Effects for Enclosed Layout Transistors in 65 nm Bulk CMOS 미리보기

회의자료

issue
2018 International Semiconductor Conference (CAS) International Semiconductor Conference (CAS), 2018. :133-136 Oct, 2018
Author
Nikolaou, A.
Bucher, M.
Makris, N.
Papadopoulou, A.
Chevas, L.
Borghello, G.
Koch, H.D.
Faccio, F.
DB Label
Database : IEEE Xplore Digital Library
원문보기
Full Text (IEEE) 
5
Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses 미리보기

학술저널

issue
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 66(7):1574-1583 Jul, 2019
Author
Bonaldo, S.
Gerardin, S.
Jin, X.
Paccagnella, A.
Faccio, F.
Borghello, G.
Fleetwood, D.M.
DB Label
Database : IEEE Xplore Digital Library
원문보기
Full Text (IEEE)  등재 - SCOPUS  조회 - Impact Factor (JCR)  등재 - Web of Science (SCIE) 
6
Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs 미리보기

회의자료

issue
2017 47th European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), 2017 47th European. :30-33 Sep, 2017
Author
Zhang, C.-M.
Jazaeri, F.
Pezzotta, A.
Bruschini, C.
Borghello, G.
Mattiazzo, S.
Baschirotto, A.
Enz, C.
DB Label
Database : IEEE Xplore Digital Library
원문보기
Full Text (IEEE) 
7
Characterization and Modeling of Gigarad-TID-Induced Drain Leakage Current of 28-nm Bulk MOSFETs 미리보기

학술저널

issue
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 66(1):38-47 Jan, 2019
Author
Zhang, C.
Jazaeri, F.
Borghello, G.
Faccio, F.
Mattiazzo, S.
Baschirotto, A.
Enz, C.
DB Label
Database : IEEE Xplore Digital Library
원문보기
Full Text (IEEE)  등재 - SCOPUS  조회 - Impact Factor (JCR)  등재 - Web of Science (SCIE) 
8
GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs 미리보기

회의자료

issue
2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD) Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD), 2016. :1-4 Oct, 2016
Author
Zhang, C.-M.
Jazaeri, F.
Pezzotta, A.
Bruschini, C.
Borghello, G.
Faccio, F.
Mattiazzo, S.
Baschirotto, A.
Enz, C.
DB Label
Database : IEEE Xplore Digital Library
원문보기
Full Text (IEEE) 
9
Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC 미리보기

회의자료

issue
2016 46th European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), 2016 46th European. :146-149 Sep, 2016
Author
Pezzotta, A.
Zhang, C.-M.
Jazaeri, F.
Bruschini, C.
Borghello, G.
Faccio, F.
Mattiazzo, S.
Baschirotto, A.
Enz, C.
DB Label
Database : IEEE Xplore Digital Library
원문보기
Full Text (IEEE) 
10
Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses 미리보기

회의자료

issue
2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Integrated Circuits, Technologies and Applications (ICTA), 2018 IEEE International Conference on. :162-163 Nov, 2018
Author
Zhang, C.-M.
Jazaeri, F.
Borghello, G.
Mattiazzo, S.
Baschirotto, A.
Enz, C.
DB Label
Database : IEEE Xplore Digital Library
원문보기
Full Text (IEEE) 
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