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5
In-situ etching of semiconductor with CBr/sub 4/ in MOCVD reactor 미리보기

회의자료

Title Source
Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Indium phosphide and related materials Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On. :71-74 2001
Author
Arakawa, S.
Itoh, M.
Kasukawa, A.
DB Label
IEEE Xplore Digital Library
원문보기
Full Text (IEEE) 
6
Carbon doping of In/sub x/Ga/sub 1-x/As by MOCVD using CCl/sub 4/ 미리보기

회의자료

Title Source
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels Indium Phosphide and Related Materials, 1992., Fourth International Conference on. :40-43 1992
Author
Stockman, S.A.
Hanson, A.W.
Curtis, A.P.
Stillman, G.
DB Label
IEEE Xplore Digital Library
원문보기
Full Text (IEEE) 
9
Growth of GaN Quantum Dots Using [(C/sub 2/H/sub 5/)/sub 4/]Si by Plasma Assisted MOCVD 미리보기

회의자료

Title Source
2006 International Conference on Nanoscience and Nanotechnology Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on. Jul, 2006
Author
Arsyad, F.S.
Subagio, A.
Sutanto, H.
Arifin, P.
Budiman, M.
Barmawi, M.
Husein, I.
Jamal, Z.A.
DB Label
IEEE Xplore Digital Library
원문보기
Full Text (IEEE) 
10
Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge 4 Se 9 . 미리보기

학술저널

Title Source
Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2022 Oct; Vol. 34 (41), pp. e2204982. Date of Electronic Publication: 2022 Sep 09.
Author
Noh G; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.; Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea.
Song H; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
Choi H; Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Korea.
Kim M; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
Jeong JH; Department of Materials Science and Engineering, Yonsei University, Seoul, 03722, Korea.
Lee Y; Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
Choi MY; Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea.
Oh S; Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Korea.
Jo MK; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.; Operando Methodology and Measurement Team, Korea Research Institute of Standards & Science (KRISS), Daejeon, 34113, Korea.
Woo DY; Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea.
Jo Y; Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea.
Park E; Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea.
Moon E; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
Kim TS; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
Chai HJ; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
Huh W; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Korea.
Lee CH; KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Korea.; Advanced Materials Research Division, Korea Institute of Science and Technology (KIST), Seoul, 02792, Korea.
Kim CJ; Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Korea.
Yang H; Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
Song S; Operando Methodology and Measurement Team, Korea Research Institute of Standards & Science (KRISS), Daejeon, 34113, Korea.
Jeong HY; Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Korea.
Kim YS; Low-Dimensional Material Team, Korea Research Institute of Standards and Science (KRISS), Daejeon, 34113, Korea.
Lee GH; Department of Materials Science and Engineering, Seoul National University, Seoul, 08826, Korea.
Lim J; Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Korea.
Kim CG; Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Korea.
Chung TM; Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Korea.
Kwak JY; Center for Neuromorphic Engineering, Korea Institute Science and Technology (KIST), Seoul, 02792, Korea.; Division of Nanoscience and Technology, Korea University of Science and Technology (UST), Daejeon, 34113, Korea.
Kang K; Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea.
DB Label
MEDLINE
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